EPC2215
EPC2215 – Enhancement Mode Power TransistorD
VDS , 200 V
EFFICIENT POWER CONVERSIONG
RDS(on) , 8 mΩ
HAL
ID , 32 A
S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum RatingsEPC2215eGaN® FETs are supplied only inpassivated die form with solder bars.PARAMETERVALUEUNITDie Size: 4.6 mm x 1.6 mm
VDS Drain-to-Source Voltage (Continuous) 200 V Continuous (T I A = 25°C) 32 A
Applications
D Pulsed (25°C, TPULSE = 300 µs) 162 • DC-DC Converters • Wireless Power Gate-to-Source Voltage 6 • BLDC Motor Drives • Solar Micro Inverters VGS V Gate-to-Source Voltage -4 • Sync Rectification for • Robotics TJ Operating Temperature -40 to 150 AC/DC and DC-DC • Class-D Audio °C T • Multi-level AC/DC STG Storage Temperature -40 to 150 Power Supplies
Thermal CharacteristicsBenefitsPARAMETERTYPUNIT
• Ultra High Efficiency R • No Reverse Recovery θJC Thermal Resistance, Junction-to-Case 0.5 • Ultra Low Q R °C/W G θJB Thermal Resistance, Junction-to-Board 2.5 • Small Footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 52 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated)PARAMETERTEST CONDITIONSMINTYPMAXUNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.6 mA 200 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.15 0.48 Gate-to-Source Forward Leakage VGS = 5 V 0.03 3.8 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.5 8.7 Gate-to-Source Reverse Leakage VGS = -4 V 0.15 0.48 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 6 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 20 A 6 8 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.6 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
BOARD DEV EPC2215 200V EGAN FET. EPC 991,56000 kr Details. EPC2110 GANFET 2NCH 120V 3.4A DIE. Get mp3 for mac. EPC 19,79000 kr Details. Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous.
Fet Family
Epc2214
As indicated in the above illustration, the EPC2215 is only 1/15th the size ot its silicon MOSFET predecessor. It also features a 33% lower RDS (ON) and an 80% lower gate-to-drain charge (QGD).And, as is the case for all GaN FETs, the EPC2215 features no reverse recovery (QRR) charge at all. These new generation 200 V eGaN® FETs are ideal for 48 V OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters EPC. The EPC2215 from EPC is a 200 V, 22 mΩ eGaN FET with a pulsed current rating of 54 A in a tiny 2.6 mm 2 footprint. Ideal for class-D audio, synchronous rectification, DC/DC converters, solar MPPTs (maximum power point tracker), and motor drives.