Type Designator: CS150N03A8
OptiMOSTM Power-MOSFET, 30 V BSC011N03LS Final Data Sheet Rev. 2.4, 2020-03-13 1 Maximum ratings at Tj=25 °C, unless otherwise specified Table 2 Maximum ratings Values Min. Parameter Symbol Unit Note / Test Condition Continuous drain current1) I D-230 146 204 129 37 A VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=4.5 V, TC=25 °C. 150N03 Datasheet, 150N03 PDF, 150N03 Data sheet, 150N03 manual, 150N03 pdf, 150N03, datenblatt, Electronics 150N03, alldatasheet, free, datasheet, Datasheets, data.
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 150 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Cs150n03 Mosfet Circuit
Package: TO-220AB Download notes for mac free download.
CS150N03A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS150N03A8 Datasheet (PDF)
0.1. cs150n03a8.pdf Size:1281K _wuxi_china
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
Cs150n03 Mosfet Motor
6.1. cs150n03 a8.pdf Size:390K _crhj
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
7.1. cs150n04 a8.pdf Size:169K _crhj
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
7.2. cs150n04a8.pdf Size:200K _wuxi_china
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
Update for mac mini. Datasheet: CS12N65FA9H, CS138, CS13N15D, CS13N50A8H, CS13N50FA9H, CS1405, CS140N10A, CS150, TPC8107, CS150N04A8, CS15N60, CS16N60A8H, CS19N40A8H, CS19N40AN, CS1N50A1, CS1N60A1H, CS1N60A3H.
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Cs150n03 Mosfet Power Supply
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Cs150n03 Mosfet Switch